Analytical models for channel potential, threshold voltage, and subthreshold swing of the short-channel fin-shaped field-effect transistor (FinFET) are obtained. The analytical model results are verified against simulations and good agreements are observed. Analytical expressions for subthreshold swing, drain induced barrier lowering effect, and threshold voltage roll-off characteristics are pr...

583 Abstract— In this paper, subthreshold swing characteristics have been presented for double-gate MOSFETs, using the analytical model based on series form of potential distribution. Subthreshold swing is very important factor for digital devices because of determination of ON and OFF. In general, subthreshold swings have to be under 100mV/dec. The channel length L g is varied from 30nm to 100...

This letter presents an approach to engineer the band structure of carbon nanotube field-effect transistors via selected area chemical gating. By exposing the center part, or the contacts, of nanotube devices to oxidizing or reducing gases, a good control over the threshold voltage and subthreshold swing has been achieved. Our experiments reveal that NO2 shifts the threshold voltage positively,...

Based on the parabolic potential approach (PPA), scaling theory, and driftdiffusion approach (DDA) with effective band gap widening (BGW), we propose an analytical subthreshold current/swing model for junctionless (JL) cylindrical nanowire FETs (JLCNFETs). The work indicates that the electron density of Qm that is induced by the current factor minimum central potentialc,minand equivalen...

In order to improve the energy efficiency of next generation digital systems, transistors withSubthreshold SlopeReferences Q. Zhang, W. Zhao, and A. Seabaugh, "Low-subthreshold-swing tunnel

Submitted for the MAR05 Meeting of The American Physical Society Band Engineering of Partially Exposed Carbon Nanotube FieldEffect Transistors XIAOLEI LIU, ZHICHENG LUO, SONG HAN, TAO TANG, DAIHUA ZHANG, CHONGWU ZHOU, University of Southern California — We present a new approach to engineer the band structure of carbon nanotube fieldeffect transistors via selected area chemical gating. By expos...

The subthreshold swing, threshold voltage and hysteresis of PCDTPT OFETs can be in situ tuned by soft plasma etching.

In order to implement complementary logic function with L-shaped tunneling field-effect transistors (TFETs), current drivability and subthreshold swing (SS) need to be improved more. For this purpose, highk material such as hafnium dioxide (HfO2) has been used as gate dielectric rather than silicon dioxide (SiO2). The effects of device parameters on performance have been investigated and the de...

This paper focuses a hetero gate material dielectric DG TFET with low band gap source material, which offers high / on off I I ratio, sub 60mV/dec subthreshold swing along with significant improvement in on current. Here analytical model for 2D electric field is derived from Poisson’s equation and is used to determine the subthreshold swing, transconductance, output conductance, gate threshold ...